O18 Ge6 Bi4

semiconductor

· O18 Ge6 Bi4

O18 Ge6 Bi4 is an experimental semiconductor compound combining germanium and bismuth oxides, belonging to the family of mixed-metal oxide semiconductors under active research for next-generation optoelectronic and thermoelectric applications. This material family is being investigated for potential use in mid-infrared photonics, thermal energy conversion, and high-temperature sensing due to the unique electronic properties that arise from combining group IV (Ge) and group V (Bi) elements in oxidized form. While not yet widely adopted in mainstream industrial production, compounds in this class represent promising candidates for applications where conventional semiconductors face thermal or spectral limitations.

Mid-infrared optoelectronics (research)Thermoelectric energy conversionHigh-temperature sensing devicesPhotonic materials (experimental)Advanced semiconductor researchNext-generation photovoltaics (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.933	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.614	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O18 Ge6 Bi4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control