O16 As8 is an oxygen-arsenic compound semiconductor, likely a research or specialized material in the III-V or chalcogenide semiconductor family. While not a mainstream commercial semiconductor, compounds in this compositional space are investigated for optoelectronic and high-frequency applications where arsenic-based semiconductors offer bandgap tunability and potential performance advantages over conventional silicon or GaAs in specific wavelength or operating regimes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.46 | GPa | — | ||
Shear Modulus(G) | 19.93 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.584 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.182 | eV/atom | — |