O14Si4In4 is a quaternary oxide semiconductor compound combining silicon, indium, and oxygen in a defined stoichiometric ratio. This material belongs to the family of mixed-metal oxides and is primarily of research interest rather than established commercial production, with potential applications in optoelectronic and photocatalytic device development. Engineers would consider this compound for niche applications requiring specific bandgap properties or catalytic functionality that cannot be easily achieved with binary oxides (SiO₂, In₂O₃) or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.019 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.293 | eV/atom | — |