O12V4Ag2Tl2 is an experimental mixed-metal oxide semiconductor compound containing vanadium, silver, and thallium constituents. This material belongs to the family of complex oxide semiconductors and remains primarily in research phase; such compounds are investigated for potential applications in advanced electronic and photonic devices where the combination of transition metals and heavy metals may enable unique electronic properties or band structure engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.911 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.946 | eV/atom | — |