O12Tm6Re1 is an experimental rare-earth oxide semiconductor compound containing thulium and rhenium elements. This material belongs to the family of mixed rare-earth and transition-metal oxides, which are of research interest for advanced optoelectronic and high-temperature electronic applications. The incorporation of rhenium—a refractory metal with excellent high-temperature stability—suggests potential use in extreme environment semiconducting devices, though this compound remains largely in the research phase and is not currently established in mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,766.9 | ksi | — | ||
Shear Modulus(G) | 10,477.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.489 | eV/atom | — |