O12Sb8 is an experimental antimony oxide semiconductor compound, likely a mixed-valence or defect-structured material belonging to the broader family of metal oxide semiconductors. This composition suggests a research-phase material under investigation for its electronic and potentially photocatalytic properties, as antimony oxides are of interest in semiconductor physics for their tunable band gap and defect chemistry.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.121 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.437 | eV/atom | — |