O12 Mn6 Te2

semiconductor

· O12 Mn6 Te2

O12Mn6Te2 is a ternary oxide-based semiconductor compound containing manganese and tellurium. This is a research-phase material studied primarily for its potential in thermoelectric and magnetoelectric applications, where the combination of transition metal (Mn) and chalcogen (Te) elements can produce unusual electronic and magnetic properties. The material represents an exploratory composition in the broader class of complex oxides and mixed-valence semiconductors, with potential relevance to energy conversion and sensing applications if material stability and processability challenges can be overcome.

thermoelectric energy conversion (research)magnetoelectric sensors (experimental)solid-state cooling deviceshigh-temperature semiconductor researchfunctional oxide materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.339	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O12 Mn6 Te2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control