O12 Mg6 Te2

semiconductor

· O12 Mg6 Te2

O12Mg6Te2 is a ternary oxide-telluride semiconductor compound combining magnesium, tellurium, and oxygen. This is a research-phase material studied for its potential semiconducting and optoelectronic properties, belonging to the broader family of wide-bandgap and mixed-anion semiconductors that show promise for applications requiring thermal stability or UV responsiveness.

experimental optoelectronicswide-bandgap semiconductorsUV photodetectorshigh-temperature electronicsphotovoltaic researchsolid-state device development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.112	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.332	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O12 Mg6 Te2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control