O12 K2 Ge4 In2
semiconductor· O12 K2 Ge4 In2
O12 K2 Ge4 In2 is a quaternary oxide semiconductor compound containing potassium, germanium, indium, and oxygen, representing an experimental material system rather than an established commercial alloy. This composition belongs to the family of mixed-metal oxides and germanates, which are primarily of research interest for optoelectronic and photonic applications where bandgap engineering and crystal structure control are critical. The inclusion of indium and germanium suggests potential relevance to wide-bandgap or intermediate-bandgap semiconductor design, though this specific stoichiometry appears to be in early-stage investigation rather than established production use.
research semiconductorsphotonic materials developmentbandgap engineeringoxide electronicsadvanced optoelectronicslaboratory characterization
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.