O12 Ga2 Tb6

semiconductor

· O12 Ga2 Tb6

O12Ga2Tb6 is a rare-earth gallium terbium oxide compound belonging to the family of mixed-valence rare-earth semiconductors and magnetic materials. This is a research-phase material studied primarily for its potential in optoelectronic and magnetic device applications, where the terbium content and gallium coordination can provide tunable band structure and strong magnetic coupling effects not easily achieved in conventional semiconductors.

rare-earth semiconductors (research)magnetic device materialsoptoelectronic components (experimental)high-temperature semiconductor researchmaterials for photonic integration studiesmagnetic oxide heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.714	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.391	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O12 Ga2 Tb6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control