O12 As4 Sb4
semiconductorO12As4Sb4 is a quaternary semiconductor compound combining oxygen, arsenic, and antimony elements, belonging to the mixed-valence oxide-chalcogenide family. This material is primarily of research interest for optoelectronic and photonic applications, where layered semiconductors with tunable band gaps are valuable; it represents an experimental composition within arsenic-antimony oxide systems that may offer advantages in infrared detection, photovoltaic devices, or solid-state lighting where conventional binary semiconductors are limited. The specific combination suggests potential for narrow band gap engineering and phase-change or memory applications, though industrial adoption remains limited compared to mature III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |