O10 V4 is a vanadium-oxide based semiconductor compound, likely part of the metal oxide semiconductor family used in electronic and optoelectronic device applications. This material exhibits properties relevant to thin-film electronics, photocatalysis, or gas-sensing applications where vanadium oxides are valued for their tunable electrical conductivity and redox activity. The material's performance in these specialized roles makes it a candidate for research-driven or niche industrial applications rather than high-volume commodity use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,509.6 | ksi | — | ||
Shear Modulus(G) | 7,120.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.389 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.392 | eV/atom | — |