O10V2Sb4 is an experimental oxide-based semiconductor compound containing vanadium and antimony, representing research into mixed-metal oxide systems for potential electronic and photonic applications. This material belongs to the family of complex metal oxides being investigated for properties relevant to thin-film devices, catalysis, and emerging semiconductor technologies. Due to its research status and limited industrial adoption, engineers would consider this material primarily in advanced device development and materials discovery contexts where novel electronic or optical properties offer advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.57 | GPa | — | ||
Shear Modulus(G) | 30.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1376 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.845 | eV/atom | — |