O10 Ta4 is a tantalum-based oxide compound in the semiconductor family, likely a mixed-valence tantalum oxide with potential applications in electronic and photonic devices. This material represents an emerging class of transition metal oxides being investigated for advanced semiconductor processing, where tantalum oxides are valued for their high dielectric constants and chemical stability. The specific O10 Ta4 stoichiometry suggests a research-phase compound rather than a mature industrial material, with potential advantages in miniaturized electronics and high-frequency applications where traditional oxides reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 141.3 | GPa | — | ||
Shear Modulus(G) | 79.46 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.177 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.043 | eV/atom | — |