O10Si2Bi4 is an experimental bismuth silicate compound belonging to the family of mixed-metal oxides with potential semiconductor properties. This composition combines silicon and bismuth oxides in a defined stoichiometry, representing early-stage research into bismuth-containing ceramics that may offer photocatalytic or optoelectronic functionality. While not yet established in mainstream industrial production, materials in this family are investigated for photocatalysis, visible-light absorption, and next-generation electronic/photonic device applications where bismuth's lone-pair electronic structure provides distinct advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.813 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.995 | eV/atom | — |