Na2Ge2Ta2O10 is an experimental mixed-metal oxide semiconductor containing sodium, germanium, and tantalum. This compound belongs to the family of complex oxide ceramics being investigated for potential optoelectronic and electrochemical applications, though it remains primarily in research rather than established commercial production. The combination of germanium and tantalum oxides with alkaline modifier (sodium) suggests interest in tuning electronic properties or ionic conductivity for emerging device technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,688.4 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 8,015.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.348 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.450 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data