O10 In4 Ba4

semiconductor

· O10 In4 Ba4

O10In4Ba4 is an experimental oxide semiconductor compound containing indium and barium, likely belonging to the family of mixed-metal oxides under investigation for advanced electronic and photonic applications. This material represents research-phase work in oxide semiconductor chemistry, where specific combinations of constituent elements are explored to achieve targeted electrical, optical, or catalytic properties not available in simpler binary or ternary oxides. The precise structural and functional characteristics of this composition are primarily of interest to materials researchers and semiconductor device developers working on next-generation functional ceramics.

research semiconductorsoxide electronicsphotonic materials developmentfunctional ceramicsexperimental device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9358	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.237	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O10 In4 Ba4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control