O10 Ge2 Bi4

semiconductor

· O10 Ge2 Bi4

O10Ge2Bi4 is a quaternary oxide semiconductor compound containing germanium and bismuth within an oxygen-rich lattice, representing an experimental material in the bismuth-germanate family. This composition sits at the intersection of photonic and electronic material research, with potential applications in next-generation optoelectronic devices, radiation detection, or ferroelectric systems where bismuth oxides are known to exhibit unique polarization and optical properties. The material's novelty and limited industrial deployment suggest it is primarily of research interest rather than established production use.

experimental optoelectronicsradiation detection (R&D)photonic materials researchferroelectric devices (emerging)semiconductor physics researchoptical waveguide development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.445	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.562	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O10 Ge2 Bi4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control