O1 Zr1 is a semiconductor material incorporating zirconium as a primary alloying element, likely developed for advanced electronic or optoelectronic applications where thermal stability and carrier mobility are critical. While specific industrial deployment data for this designation is limited, zirconium-based semiconductors are explored in research contexts for high-temperature electronics, radiation-hardened devices, and wide-bandgap applications where conventional silicon or gallium arsenide face performance constraints. Engineers would evaluate this material for specialized aerospace, nuclear, or extreme-environment applications where conventional semiconductors degrade.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30,554.7 | ksi | — | ||
Shear Modulus(G) | 11,527.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.510 | eV/atom | — |