O1 Zn1 is a zinc-containing oxide semiconductor compound, likely an experimental or specialized material within the zinc oxide family used for electronic and optoelectronic applications. This material is of interest in research contexts for its potential in transparent conducting oxides, thin-film transistors, or photovoltaic devices where zinc oxide's wide bandgap and favorable electronic properties offer advantages. Engineers would consider this composition when conventional indium tin oxide (ITO) or other established transparent conductors are constrained by cost, availability, or performance requirements in specific wavelength or thermal regimes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 175.4 | GPa | — | ||
Shear Modulus(G) | 69.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.078 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.465 | eV/atom | — |