O1 Ta1

semiconductor

· O1 Ta1

O1 Ta1 is a tantalum-containing semiconductor compound with oxygen in its composition, belonging to the metal oxide or mixed-oxide family of semiconducting materials. This material is primarily of research and development interest for advanced electronic and optoelectronic applications where tantalum's high dielectric constant and chemical stability offer advantages over conventional semiconductors. It may be explored in thin-film devices, high-κ gate dielectrics, or specialized sensing applications where its tantalum content provides superior corrosion resistance and thermal stability compared to standard silicon or oxide alternatives.

high-κ dielectric layersthin-film electronicssemiconductor researchcorrosion-resistant coatingsspecialized sensing devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01820	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.083	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O1 Ta1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control