O1 Ni1

semiconductor

· O1 Ni1

O1 Ni1 is a nickel-doped oxide semiconductor compound, likely part of the nickel oxide (NiO) family with controlled doping to modify electronic and structural properties. This material is primarily of research and development interest for applications requiring tunable bandgap and carrier concentrations, with potential use in photocatalysis, gas sensing, and thin-film electronics where nickel-based oxides offer advantages in chemical stability and cost compared to more exotic semiconductor alternatives.

photocatalytic devicesgas sensorsthin-film electronicsoptical coatingsexperimental semiconductor researchelectrochemical applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	29,998.6	ksi	—
Shear Modulus(G)	7,539.1	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00310	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O1 Ni1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control