O1 Ba1 is a semiconductor compound in the barium oxide family, likely an experimental or emerging material composition designed for electronic or optoelectronic applications. This material represents research into oxide-based semiconductors, which are of interest for transparent electronics, photovoltaic devices, and wide-bandgap semiconductor applications where conventional silicon or gallium arsenide may be unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,931.1 | ksi | — | ||
Shear Modulus(G) | 5,914.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.048 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.746 | eV/atom | — |