Ni2InVO6

semiconductor

· Ni2InVO6

Ni2InVO6 is a ternary oxide semiconductor compound combining nickel, indium, and vanadium in a layered or spinel-related crystal structure. This material is primarily of research interest rather than established commercial production, explored for its potential in energy storage, photocatalysis, and electronic device applications due to the mixed-valence properties of its constituent elements. The combination of transition metals (Ni, V) with a post-transition metal (In) creates interesting electronic and optical properties that make it a candidate for emerging technologies in catalysis and electrochemistry.

Research electrodesPhotocatalytic materialsBattery/supercapacitor developmentOxygen evolution catalystsElectronic devices (experimental)Thin-film semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.920	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni2InVO6

Electrical Properties

Regulatory Screening

Environmental

Export Control