Ni2 Zn1 Ge1

semiconductor

· Ni2 Zn1 Ge1

Ni₂Zn₁Ge₁ is a ternary intermetallic semiconductor compound combining nickel, zinc, and germanium in a defined stoichiometric ratio. This material belongs to the family of ternary semiconductors and is primarily of research interest for potential applications in thermoelectric devices, optoelectronics, and solid-state energy conversion where the intermetallic structure and semiconductor properties offer opportunities for band gap engineering and charge carrier control.

Thermoelectric energy conversionResearch semiconductorsIntermetallic compoundsOptoelectronic devices (experimental)High-temperature applications (research phase)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	20,247.3	ksi	—
Shear Modulus(G)	5,351.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1950	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni2 Zn1 Ge1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control