Ni₂P₂S₆ is a layered ternary chalcogenide semiconductor composed of nickel, phosphorus, and sulfur elements arranged in a van der Waals stacked structure. This material belongs to the emerging class of two-dimensional (2D) semiconductors and is primarily investigated in academic and research settings for next-generation electronic and optoelectronic devices. Its layered nature and tunable bandgap make it a candidate for flexible electronics, photodetectors, and energy storage applications where conventional semiconductors face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00270 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2510 | eV/atom | — |