Ni₂In₄Yb₂ is an intermetallic semiconductor compound combining nickel, indium, and ytterbium elements. This is a research-phase material studied for its potential in thermoelectric and optoelectronic applications, where the rare-earth ytterbium dopant modifies electronic band structure and thermal transport properties. Engineers would consider this compound for niche applications requiring low-dimensional electronic behavior or mixed-valence effects, though it remains primarily in exploratory development rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 66.10 | GPa | — | ||
Shear Modulus(G) | 33.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4760 | eV/atom | — |