Ni₂Ge₂Ho₁ is an intermetallic semiconductor compound combining nickel, germanium, and holmium—a rare-earth doped system still primarily in the research phase. This material belongs to the broader family of rare-earth intermetallics, which are studied for potential applications in thermoelectrics, magnetocaloric devices, and advanced electronics where the lanthanide (holmium) dopant can introduce magnetic or electronic functionality not available in binary Ni-Ge systems. Engineers and materials researchers investigate such compositions to explore tunable band structure, magnetic ordering, or enhanced charge-carrier behavior for next-generation solid-state devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 122.4 | GPa | — | ||
Shear Modulus(G) | 46.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00970 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6820 | eV/atom | — |