Ni2 Ge2 Ho1

semiconductor
· Ni2 Ge2 Ho1

Ni₂Ge₂Ho₁ is an intermetallic semiconductor compound combining nickel, germanium, and holmium—a rare-earth doped system still primarily in the research phase. This material belongs to the broader family of rare-earth intermetallics, which are studied for potential applications in thermoelectrics, magnetocaloric devices, and advanced electronics where the lanthanide (holmium) dopant can introduce magnetic or electronic functionality not available in binary Ni-Ge systems. Engineers and materials researchers investigate such compositions to explore tunable band structure, magnetic ordering, or enhanced charge-carrier behavior for next-generation solid-state devices.

Thermoelectric materials (research)Magnetocaloric devicesSemiconductor researchRare-earth intermetallicsAdvanced electronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
Pa
Shear Modulus(G)
Pa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.