Ni2 Ga1 Zr1

semiconductor

· Ni2 Ga1 Zr1

Ni₂GaZr is an intermetallic compound combining nickel, gallium, and zirconium, classified as a semiconductor with potential applications in advanced materials research. This ternary system represents an experimental composition that combines the properties of Heusler-like intermetallics with zirconium's high-temperature stability, making it of interest for emerging technologies requiring semiconducting intermetallics. While not yet widely deployed in mainstream engineering, materials in this family are being investigated for thermoelectric devices, high-temperature electronics, and next-generation catalytic applications where conventional semiconductors face thermal or chemical limitations.

thermoelectric deviceshigh-temperature electronicsintermetallic research compoundsadvanced catalyst substratesphase-change memory materialsexperimental semiconductor applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	156.7	GPa	—
Shear Modulus(G)	9.640	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01260	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5530	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni2 Ga1 Zr1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control