Ni2As2 is an intermetallic semiconductor compound composed of nickel and arsenic in a 1:1 stoichiometric ratio. This material belongs to the family of binary metal-arsenide semiconductors and is primarily of research and developmental interest rather than established commercial production. The compound is investigated for potential applications in optoelectronics, thermoelectric devices, and high-temperature semiconductor applications where its electronic properties and chemical stability could offer advantages over conventional semiconductors, though it remains largely in the experimental stage with limited industrial adoption compared to more mature semiconductor materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,946 range 16,819.6–19,072.5median of 2 measurements | ksi | — | ||
Shear Modulus(G) | 4,642.7 range 2,477.2–6,808.1median of 2 measurements | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01160 range 0.00700–0.01620median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09600 range -0.2580–0.06600median of 2 measurements | eV/atom | — |