Ni1Sb1Ho1 is an intermetallic semiconductor compound combining nickel, antimony, and holmium in a 1:1:1 stoichiometric ratio. This is a research-phase material explored primarily in thermoelectric and magnetoelectronic applications, where the rare-earth holmium dopant is expected to enhance electronic or magnetic properties compared to binary Ni–Sb systems. As an experimental compound rather than a production material, it represents the growing interest in ternary intermetallics for energy conversion and specialized semiconductor device engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,947.8 | ksi | — | ||
Shear Modulus(G) | 8,412.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9310 | eV/atom | — |