Nickel disulfide (NiS₂) is a layered semiconductor compound belonging to the transition metal dichalcogenide family, characterized by strong metal-sulfur bonding and tunable electronic properties. This material is primarily investigated in research contexts for energy storage applications (battery electrodes and supercapacitors), photocatalysis, and emerging optoelectronic devices, where its semiconductor behavior and relatively high mechanical stiffness make it attractive compared to graphene or other carbon-based alternatives for applications requiring both structural integrity and electrochemical activity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,116.5 | ksi | — | ||
Shear Modulus(G) | 2,966.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2860 | eV/atom | — |