Ni₁N₁ is a nickel nitride semiconductor compound, representing a transition metal nitride material of interest for electronic and optoelectronic applications. This material belongs to the broader family of refractory metal nitrides, which are researched for their potential to combine metallic conductivity with semiconductor properties and high thermal/chemical stability. Nickel nitride compounds are explored in photocatalysis, thin-film electronics, and as hard coatings, where their hardness and corrosion resistance offer advantages over conventional semiconductors, though commercial deployment remains limited compared to established alternatives like GaN or silicon nitride.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 247.9 | GPa | — | ||
Shear Modulus(G) | 59.76 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00430 range 0.00350–0.00510median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7590 range 0.5030–1.015median of 2 measurements | eV/atom | — |