Ni₁I₂ (nickel iodide) is an inorganic semiconductor compound combining nickel and iodine elements. This material is primarily of research interest rather than established industrial production, studied within the halide semiconductor family for potential optoelectronic and photovoltaic applications. The compound is notable in the context of emerging semiconductor technologies where halide-based materials are being explored as alternatives to traditional silicon and III-V semiconductors, particularly for applications requiring specific band gap engineering or solution-processable deposition methods.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,553.4 | ksi | — | ||
Shear Modulus(G) | 1,421.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1000 | eV/atom | — |