Ni1 Hg1 O2

semiconductor

· Ni1 Hg1 O2

Ni₁Hg₁O₂ is an intermetallic semiconductor compound combining nickel, mercury, and oxygen in a defined stoichiometric ratio. This is a research-phase material that belongs to the family of mixed-metal oxides and intermetallics; such compounds are explored for their unique electronic and magnetic properties that differ substantially from their constituent elements. Applications remain largely experimental, primarily in materials science research for studying semiconductor behavior, phase transitions, and potential use in specialized electronic or sensing devices where the combined properties of nickel and mercury oxides offer advantages over single-phase alternatives.

research semiconductorselectronic materials developmentphase transition studiesmetal oxide researchexperimental sensing applicationsmaterials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00750	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6810	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni1 Hg1 O2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control