Ni₁As₂O₆ is a nickel arsenate oxide semiconductor compound belonging to the family of mixed-metal oxides with potential applications in electronic and photonic devices. This material is primarily of research and development interest rather than established industrial use, with investigation focused on its semiconducting properties, crystal structure stability, and potential applications in optoelectronics and energy conversion systems. The combination of nickel and arsenic oxides positions it within materials exploration for niche applications where the electronic band structure and thermal/mechanical stability of such ternary compounds offer advantages over simpler binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,745 | ksi | — | ||
Shear Modulus(G) | 13,037 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.135 | eV/atom | — |