Ni1 Ag1 Te2

semiconductor

· Ni1 Ag1 Te2

Ni₁Ag₁Te₂ is an intermetallic semiconductor compound combining nickel, silver, and tellurium in a 1:1:2 stoichiometric ratio. This is a research-phase material within the broader family of ternary telluride semiconductors, investigated primarily for its potential thermoelectric and optoelectronic properties rather than as an established commercial product. The material represents an alternative strategy for engineering band gap and charge carrier mobility by combining multiple metal cations with a chalcogen, positioning it as a candidate for next-generation energy conversion and sensing applications where conventional binary semiconductors are insufficient.

thermoelectric energy conversionmid-infrared optoelectronicsexperimental semiconductor researchsolid-state cooling devicesadvanced photodetectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.02400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni1 Ag1 Te2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control