NdGaO3 is a rare-earth gallate ceramic compound combining neodymium oxide with gallium oxide, belonging to the family of perovskite-related oxides used primarily in advanced semiconductor and photonic applications. It serves as a substrate material and functional component in epitaxial growth of complex oxide thin films, particularly for high-temperature superconductors and ferroelectric devices, where its lattice parameters and thermal properties enable precise control of film properties. While primarily a research and specialized industrial material rather than a commodity semiconductor, NdGaO3 is valued in academia and device development for its chemical stability, wide bandgap characteristics, and compatibility with oxide heterostructure engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.529 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.000 | eV | — | ||
| ↳ | 3.895 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 2.000 | µB | — | ||
Seebeck Coefficient(S) | -11.05 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.494 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -2.891 | eV/atom | — | ||
| ↳ | -1.371 | eV/atom | — |