NdGaO3
semiconductorNdGaO3 is a rare-earth gallate ceramic compound combining neodymium oxide with gallium oxide, belonging to the family of perovskite-related oxides used primarily in advanced semiconductor and photonic applications. It serves as a substrate material and functional component in epitaxial growth of complex oxide thin films, particularly for high-temperature superconductors and ferroelectric devices, where its lattice parameters and thermal properties enable precise control of film properties. While primarily a research and specialized industrial material rather than a commodity semiconductor, NdGaO3 is valued in academia and device development for its chemical stability, wide bandgap characteristics, and compatibility with oxide heterostructure engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB)2 entries | — | μB | — | — | |
| ↳ | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |