Nd₆Si₄S₁₆I₂ is a rare-earth semiconductor compound combining neodymium with silicon, sulfur, and iodine—a composition that places it in the emerging class of mixed-halide and chalcogenide semiconductors. This material appears to be primarily in research and development phase, with potential applications in optoelectronics and solid-state device engineering where rare-earth doping and tunable bandgaps are advantageous. The inclusion of iodine and sulfur suggests interest in photovoltaic, luminescent, or radiation-detection applications where rare-earth ions provide unique electronic and optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.584 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.565 | eV/atom | — |