Nd₄S₈ is a rare-earth sulfide semiconductor compound belonging to the lanthanide chalcogenide family, combining neodymium with sulfur in a stoichiometric ratio. This material is primarily investigated in research contexts for optoelectronic and photonic applications, particularly where rare-earth doping or narrow bandgap semiconducting behavior is advantageous; it represents an experimental class of materials studied for potential use in infrared emitters, thermal imaging systems, and quantum dot precursors where conventional semiconductors (Si, GaAs) are unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,720.6 | ksi | — | ||
Shear Modulus(G) | 6,432 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.926 | eV/atom | — |