Nd3Ga1N1 is an experimental rare-earth nitride semiconductor compound combining neodymium, gallium, and nitrogen in a ternary system. This material belongs to the rare-earth gallium nitride family and is primarily of research interest for exploring novel semiconductor properties that may extend beyond conventional binary GaN devices. Potential applications under investigation include high-temperature electronics, optoelectronics, and wide-bandgap power devices, though this specific composition remains largely in the development phase and is not yet widely commercialized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,820.8 | ksi | — | ||
Shear Modulus(G) | 2,613.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02520 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9210 | eV/atom | — |