Nd2Zn2As2O2 is an experimental ternary oxide semiconductor containing neodymium, zinc, and arsenic, belonging to the broader family of rare-earth mixed-metal oxides. This compound is primarily of research interest rather than established industrial production, with potential applications in optoelectronic devices and advanced semiconductor technologies that leverage rare-earth doping for photonic or magnetic properties. Engineers would consider this material in early-stage development contexts where rare-earth semiconductor phases offer unique electronic or photonic functionality not easily achieved with conventional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8476 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.898 | eV/atom | — |