Nd₂SeO₂ is an oxychalcogenide semiconductor combining rare-earth neodymium with selenium and oxygen, representing an emerging class of mixed-anion compounds with potential for optoelectronic and photonic applications. This material is primarily in the research and development phase, investigated for its semiconductor properties that derive from the interplay between rare-earth electronic states and chalcogenide chemistry. The oxychalcogenide family is notable for tunable bandgaps and potential applications where traditional oxide or chalcogenide semiconductors fall short, such as in photovoltaics, photocatalysis, or infrared sensing where rare-earth dopants can enhance light absorption or emission.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 105.9 | GPa | — | ||
Shear Modulus(G) | 56.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.314 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.195 | eV/atom | — |