Nd₁Bi₂I₁O₄ is an experimental mixed-metal halide oxide semiconductor combining rare-earth (neodymium) and bismuth chemistry with iodine and oxygen. This compound belongs to the family of layered perovskite-related materials under active research for optoelectronic and photovoltaic applications, where the combination of elements is designed to optimize band gap, carrier mobility, and light absorption properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,708.6 | ksi | — | ||
Shear Modulus(G) | 5,778.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.386 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.044 | eV/atom | — |