Nd₁Bi₂Br₁O₄ is a mixed halide-oxide semiconductor compound combining rare-earth (neodymium), bismuth, and bromine elements in an anionic framework. This is an experimental research material from the family of perovskite-related halide-oxide hybrids, primarily studied for its semiconducting properties and potential photocatalytic or optoelectronic functionality. Such materials are of interest in emerging photovoltaic, photocatalysis, and light-emission applications where tunable bandgaps and layered crystal structures offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,953.5 | ksi | — | ||
Shear Modulus(G) | 5,786 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.317 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.112 | eV/atom | — |