NdAs is a binary intermetallic semiconductor compound composed of neodymium and arsenic, belonging to the rare-earth pnictide family of materials. This compound is primarily investigated in research contexts for potential optoelectronic and thermoelectric applications, leveraging the unique electronic properties that arise from rare-earth–pnictide interactions. Engineers and materials researchers evaluate NdAs as a candidate material for next-generation solid-state devices where rare-earth chemistry can provide advantages in charge carrier mobility, bandgap engineering, or thermal performance compared to conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.131 | eV/atom | — |