NbGaAs is an intermetallic compound combining niobium, gallium, and arsenic, classified as a metallic material with a crystalline structure. This is a specialized research compound typically investigated for semiconductor and optoelectronic applications where the unique electronic properties of III-V semiconductors (gallium arsenide) are combined with refractory metal characteristics. While not widely deployed in mainstream industrial production, NbGaAs and related ternary systems are of interest in advanced materials research for high-temperature electronics, photovoltaic devices, and specialized solid-state applications where conventional GaAs or simple Nb-based materials show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1.220 | GPa | — | ||
Shear Modulus(G) | 1.980 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.432 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.172 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.075 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.6023 | eV/atom | — |