Nb8Se16 is a layered transition metal chalcogenide semiconductor compound combining niobium and selenium in a stoichiometric ratio. This material belongs to the family of quasi-2D semiconductors and is primarily of research interest for next-generation electronics and optoelectronics, where its layered crystal structure and tunable bandgap make it a candidate for thin-film applications, though industrial production and deployment remain limited compared to established semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01430 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8630 | eV/atom | — |